The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN
X. J. Li; Desheng Zhao; Desheng Jiang; Zongshun Liu; Ping Chen; J.J. Zhu; L. C. Le; Jing Yang · 2014 · Journal of Applied Physics
WASTE classifies this as Negative / Null Result Report · AI classification, approximate
The study found no significant effect — useful as a negative control or null benchmark for your own design.
Abstract (excerpt)
The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50 nm on p-GaN led to better electrical characteristics, showing a lower…
Excerpt shown for reference under fair use — read the full paper at the publisher.
Hosted by the publisher — may require access.
About to run something similar?
Run an AI Precheck on your own design to catch failure modes like this one before you spend the time. Your first desk check is free.
Related failures
Scale-free networks are rare.
Negative / Null Result ReportScale-free networks are rare
Negative / Null Result ReportDark Matter Search Results from the CDMS II Experiment
Negative / Null Result ReportDetection of a gamma-ray source in the Galactic Center consistent with extended emission from dark matter annihilation and concentrated astrophysical emission
Negative / Null Result ReportTransient Water Vapor at Europa’s South Pole
Negative / Null Result ReportThe NANOGrav 11 Year Data Set: Pulsar-timing Constraints on the Stochastic Gravitational-wave Background
WASTE indexes this work — it does not host or republish it. Failure-type classification is automated and approximate.
Metadata source: OpenAlex · DOI 10.1063/1.4900729